作　　者： (张弘）; (郑介鑫）; (郭建平）;

机构地区： 中山大学,电子与信息工程学院,广东广州510006

出　　处： 《电力电子技术》 2017年第8期71-74,94,共5页

摘　　要： 以Si材料为基础的传统电力电子功率器件已逐步逼近其理论极限,难以满足电力电子技术高频化和高功率密度化的发展需求。与传统的Si器件相比,氮化镓(GaN)器件展现了其在导通电阻和栅极电荷上的优势,可使功率转换器实现更小体积、更高频率及更高效率,从而在汽车、通信、工业等领域中具有广阔的应用前景。然而,缺乏高速GaN栅极驱动是目前GaN功率转换器未能大力推广的主要原因之一。详细研究了增强型GaN功率器件驱动电路设计的各种问题,如效率、损耗、延迟时间、栅极振荡、自举电压上升、抗电压变化率干扰、死区时间、反向导通损耗及寄生效应等,并综述了针对上述问题的相应解决方法及优缺点,最后讨论了GaN栅极驱动的未来发展趋势。 As the traditional power electronic devices based on Si materials have been approaching the theoretical lim- it,it is difficult to meet the development requirements of fast switching and high power density.Compared with the traditional Si devices,GaN devices feature smaller on resistance and gate charge.So that they can work with high switch frequency and power efficiency.As a result,the power converter based on GaN power transistors can be small- er,faster, and more efficient compared with the Si counterpart.However,the lack of high-speed GaN gate driver is the main obstacle to give full play to GaN based power converters.The design challenges of the driving techniques for enhanced GaN power transistors, including fast switch, high power efficiency, and high reliability,have been investi- gated.And then the relevant solutions published recently have been summarized.

关 键 词： 功率器件 高压功率转换器 驱动电路