作　　者： ; ;

机构地区： 复旦大学物理学系

出　　处： 《物理学报》 1998年第10期1695-1703,共9页

摘　　要： 利用形式散射的格林函数方法，研究了Ａｓ在ＩｎＰ（１１０）表面不同吸附结构的电子性质．体材料采用实用的经验紧束缚近似方法的哈密顿，分别计算了ＡｓＰ交换作用和形成外延连续层结构表面态的性质，指出了表面态和表面共振态产生的原因．在计算中，一些表面紧束缚相互作用参数进行了调整，所得结果好于其他理论方法． AbstractBased on the tight binding scattering theoretical method ,the electronic structure of As adsorption on the surface of InP(110) is studied.The bulk material is described by a realistic empirical tight binding Hamiltonians ,the translationally invariant As/InP(110)(1×1) system is discussed in terms of the ordered As monolayer and an exchange reaction between surface P and As adatoms. Surface states and surface resonances are identified from the calculated local density of states along the four zone boundaries of the (110) surface Brillouin zone .In this calculation ,some ETB parameters are adjusted at the surface, the results are in good agreement with the experiment and are better than other theoretical results. 

关 键 词： 表面态 表面电子性质 磷化铟 砷 吸附结构

领　　域： [电子电信]